中文摘要：

报道了我们最近研制的780nm半导体激光放大装置。激光放大管采用Eagleyard公司生产的（EYP．TPA-0780-01000）半导体锥形放大器，当输入的种子源激光功率为25mW时，放大器输出的激光功率达600mW左右，该光束经过透镜整形，声光调制器频移，然后耦合到单模保偏光纤后，输出功率达110mW。该激光放大装置可很好的用于高密度冷原子的俘获。

英文摘要：

In this paper, we report an optical power amplifier operating at 780 nm. The optical power amplifier is a semiconductor tapered amplifier （Eagleyard, EYP-TPA-0780-01000） ; the output power from the optical power amplifier is up to about 600 mW when a seeding laser beam with a power of 25 mW is injected into the amplifier. After beam shaping by lens, frequency shifting by an acousto-optical modulator （AOM） and spatial filtering by a single-mode fiber, the output power is up to 110 mW. The presented optical power amplifier may be applied into the MOT for achieving a larger number of trapped atoms.