中文摘要：

Sb2Te3基半导体合金是目前性能较好的热电半导体材料。将材料低维化处理可以获得较块状材料更大的热电优值。通过磁控溅射工艺制备低维Sb2Te3薄膜，并通过AFM、XRD和XPSN试方法对薄膜的成分、薄膜表面以及原子偏析进行表征。通过退火工艺去除薄膜应力，观察退火工艺前后薄膜表面形貌的变化以及退火温度对薄膜表面质量的影响。试验结果表明通过磁控溅射工艺所制备出的Sb2Te3薄膜为非晶态，随着溅射功率增大，薄膜的表面粗糙度增大。退火可使薄膜变为晶态，但是表面粗糙度增大。较大或较小溅射功率下所制备的薄膜其合金成分与合金靶材有较大偏差。

英文摘要：

Sb2Te3 based semiconductor alloy is the best semiconductor TE materials at present. As low dimensional materials having higher ZT than bulk materials, the magnetic sputtering technology was used to fabricate Sb2Te3 film to improve its thermoelectric figure of merit. The obtained Sb2Te3 film was characterized by AFM, XRD and XPS to analysis the surface morphology and the composition. Annealing process was used to eliminate the residual stress in the film and the influence from annealing temperature on film surface conditions was also investigated. The results showed that the film made by sputtering process was at amorphous state. High power might lead to crystalline film but worse surface roughness. Annealing process can transfer the amorphous film to be the crystalline film but also increase the surface roughness. Low or relative high power will bring the film with different compositions from that in target material.