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中文摘要：
针对二氧化钒（VO2）薄膜在可调谐太赫兹功能器件中的应用，利用低温磁控溅射技术，在太赫兹和光学频段透明的BK7玻璃上制备出高质量的VO2薄膜．晶体结构和微观形貌分析显示薄膜为单相VO2单斜金红石结构，具有明显的（011）晶面择优取向，结构致密，表面平整．利用四探针技术和太赫兹时域光谱系统分析了薄膜的绝缘体一金属相变特性，发现相变过程中薄膜电阻率变化达到4个数量级，同时对太赫兹透射强度具有强烈的调制作用，调制深度高达89％．通过电学相变和太赫兹光学相变特性的对比研究，证实薄膜的电阻率突变主要与逾渗通路的形成有关，而太赫兹幅度的调制则来源于薄膜中载流子浓度的变化．该薄膜制备简单，成膜质量高，太赫兹调制性能优异，可应用于太赫兹开关和调制器等集成式太赫兹功能器件．
英文摘要：
Recently, the applications of vanadium dioxide film （VOe） in terahertz functional devices have attracted much attention because VO2 has a remarkable response to THz wave, In this Work BK7 glass a material highly transparent to both THz and optical band is adopted as a substrate. High-quality VO2 film is deposited on a BK7 substrate using low temperature magnetron sputtering technology. The crystallinity and microstructure of the thin film are investigated by X-ray diffraction and atomic force microscopy. The results indicate that the as-deposited film crystallizes directly into single-phase VO2 with （011） preferred orientation and compact nanostruc- ture. Under a heating-cooling cycle, the film undergos a metal-insulator transition with an abrupt resistivity change reaching more than 4 orders of magnitude. Terahertz transmission modulation is characterized by terahertz time domain spectrum, and a giant modulation depth of 89% is obtained. Due to the high transparence and the huge modulation effect, the VOjBK7 can be widely used for THz devices such as modulators and switches.
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