中文摘要：

通过磁控溅射沉积过程中,硅靶表面中毒制备表面微量硅掺杂类金刚石薄膜,并改变沉积偏压制备出不同结构及性能的含硅类金刚石薄膜.利用XPS、拉曼光谱仪、SEM、纳米压痕仪和摩擦磨损试验机等手段表征含硅类金刚石薄膜的结构、横截面形貌、力学性能及摩擦学性能.结果表明：偏压为-600 V下沉积Si-DLC薄膜具有致密结构,高结合力,高硬度的特性,在大气环境下,薄膜与Al2O3陶瓷球对摩表现出优良的摩擦学性能,摩擦系数与磨损率分别为0.018和1.60×10-16 m3/（N.m）.

英文摘要：

Due to the deposition of C on Si target during the deposition process, we can use this target poisoning phenomenon to deposit DLC film with trace or low Si, the Si - DLC films with different structures were prepared via different negative bias application. The structure, cross - sections, composition, mechanical and tribological properties of the films was systemically investigated by XPS, Raman spectra, scanning electron microscopy, nano - indenter and tribo - tester. The results show that the content of sp3 hybrid carbon was increased as the Si doped, and Si - doping could release the internal stress and increase adhesion to silicon substrate. The Si - DLC film prepared at bias of - 600 V exhibited higher hardness, higher adhesion, lower friction coefficient about 0. 018 and lower wear rate about 1.60 x 10 -16 m3/（ N . m） in the ambient atmosphere.