Evolution of domain structure and frequency effect on ferroelectric properties in BIT ferroelectrics
- ISSN号:1003-6326
- 期刊名称:《中国有色金属学报:英文版》
- 时间:0
- 分类:O484.1[理学—固体物理;理学—物理] TB383[一般工业技术—材料科学与工程]
- 作者机构:[1]Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan 411105, China, [2]Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan 411105, China
- 相关基金:Projects(10672139, 10825209, 50872117) supported by the National Natural Science Fotmdation of China; Proj ect(207079) supported by the Key Program of Ministry of Education of China; Project(07JJ5002) supported by the Natural Science Foundation of Hunan Province, China; Project(08C862) supported by Scientific Research Fund of Hunan Provincial Education Department, China; Project([2008]101) supported by Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry; Project(J2007]362) supported by Hunan Prestigious Fu-rong Scholar Award, China
关键词:
退火温度, 薄膜合成, 铁电性能, 显微组织, 漏电流密度, 原子力显微镜, 阻抗分析仪, 参数测试仪, BNKT 15 thin film, metal-organic decomposition, annealing temperature, remnant polarization, leakage current density
中文摘要:
Corresponding author: ZHENG Xue-jun; Tel: +86-731-58298119; E-mail: zhengxuejun@xtu.edu.cn