中文摘要：

CdGeAs2晶体是在红外频率转换应用中前景很广泛的非线性光学材料。点缺陷的存在引起了CdGeAs2晶体在5.5μm处的吸收，从而阻碍了其应用发展。本文综述了CdGeAs2晶体点缺陷的研究进展。利用光学吸收、光致发光、霍尔效应和电子顺磁共振等技术研究了CdGeAs2晶体的点缺陷；并利用原子模拟技术和密度泛函理论方法计算了CdGeAs2晶体的点缺陷；最后，展望了CdGeAs2晶体点缺陷今后重点开展的研究方向。

英文摘要：

CdGeAs2 is a promising nonlinear optical material useful for frequency conversion applications in the infrared region. A major limitation to the development of CdGeAs2-based applications is the presence of point defect that can induce absorption band peaking near 5.5μm in the crystals. The progress of the point defects in CdGeAs2 is summarized in this paper. The point defects are studied by optical absorption, photoluminescence, Hall effect and electron paramagnetic resonance techniques. And the point defects are calculated by atomistic simulations and density functional theory methods. At last, the trends in the investigation on the point defects in CdGeAs2 are prospected.