中文摘要：

实现了一种单片集成的长波长可调谐光探测器．通过外延实验，摸索出低温缓冲层的最佳生长条件，成功地在GaAs衬底上生长出晶格失配度约4％的高质量的InP基材料．基于此低温缓冲层，在GaAs衬底上首先生长GaAs／AIAs材料的F-P腔滤波器，然后异质外延InP．In0.53Ga0.47As-InP材料的PIN结构．制作出的器件通过热调谐，峰值波长从1533．1nm红移到1543．1nm，实现了10．0nm的调谐范围，同时响应线宽维持在0．8nm以下，量子效率保持在23％以上，响应速率达到6．2GHz．

英文摘要：

We demonstrate a tunable long-wavelength photodetector by using a he（eroepitaxy growth of an InP-In0.53 Ga0.47- As-InP p-i-n structure on a GaAs-based GaAs/AIAs Fabry-Perot filter structure. High quality heteroepitaxy is realized by em- ploying a thin low-temperature buffer layer, which is carried out in a series of experiments. A wavelength tuning range of 10.0nm,an external quantum efficiency of about 23%, a spectral linewidth of 0.8nm, and a 3dB bandwidth of 6.2GHz are simultaneously obtained in the device.