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中文摘要：
为得到GaAs表面稳定的钝化层，以（NH4）2S为主要对象，首先研究不同溶剂对钝化效果的影响，得出溶液极性越小，钝化效果越好的结论；研制出一种新的钝化溶液：Se＋（NH4）2S＋叔丁醇。通过光致发光（PL）谱对比（NH4）2S＋去离子水、（NH4）S2＋异丙醇、（NH4）2S＋叔丁醇、se＋（NH4）2S＋叔丁醇等几种不同含硫溶液钝化GaAs（100）表面的发光特性。通过测试PL发光谱发现，se＋（NH4）2s＋叔丁醇溶液处理的GaAs（100）表面发光强度最强，是未做钝化处理的25倍左右。钝化处理后的基片在空气中放置数小时，PL谱未见明显退化。得出Se＋（NH4）2s＋叔丁醇不论从发光强度还是稳定性来说，都是较为理想的钝化溶液。
英文摘要：
A novel type of sulf-solution has been successfully developed to passivate the GaAs （100） wafer sur- faces. The newly developed sulf-solution mainly contains Se ＋ （NH4）2S ＋ t - C4H9OH. The influence of the different sulf- solutions, such as （NH4）2S ＋ H20 （de-ionized water）, （NI-I4）2S ＋ C3H7OH, （NH4）2S ＋ t - C4H9OH, and Se ＋ （NH4）2S ＋ t- C4H9OH,on the passivation of the GaAs surfaces was characterized and compared with argon ion excited photolumi- nence （PL） spectroscopy. The preliminary results show that the sulf-solution, Se ＋ （NH4）2S ＋ t - C4H9OH, outperforms all the other three sulf-solutions. For instance, after immersion in the Se ＋ （NH4）2S ＋ t - C4H9OH solution at 50℃ for 20 min, the PL intensity was found to be 25 times higher than that of the control sample; no PL-intensity degeneration was observed after exposure to air for three hours.
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