中文摘要：

通过选择性腐蚀ZnO纳米棒,在p型Si衬底上低温合成了ZnO纳米管阵列,构成ZnO纳米管阵列/p-Si异质结构（n-ZnONT/p-Si）.ZnO纳米管阵列光致发光谱显示,在378 nm处出现了很强的紫外发射峰,而在500 nm左右有一个较宽的绿色发光峰,表明ZnO纳米管具有较好的结晶性.电流-电压曲线显示,n-ZnONT/p-Si异质结构在光暗两种条件下都表现出了较好的整流特性.在紫外光照射下,反向偏压区电流出现了较大的变化,反映出n-ZnONT/p-Si异质结构有较强的紫外光响应,有望成为潜在的紫外光探测器件.

英文摘要：

High-density vertically aligned ZnO nanotube arrays were prepared on p-Si substrates by a fac- ile and simple chemical etching process from electrodeposited ZnO nanorods at a low temperature. The ZnO nanotube arrays/p-Si hetero-structures were obtained. The ZnO nanotube arrays exhibited strong ul- traviolet emissions at 378 nm and a broad green defect-related visible emission at 500 nm, indicating their high crystalline quality. Current-voltage measurements of the ZnO nanotube arrays/p-Si hetero-sturetures showed good rectifying behavior with or without ultraviolet light illumination. A good response to ultravio- let light illumination was observed from photocurrent measurements in the reverse biased condition. The results showed that the device was a promising candidate for UV detection.