位置：成果数据库 > 期刊 > 期刊详情页
Improving p-type contact characteristics by Ni-assisted annealing and effects on surface morphologic
  • ISSN号：0169-4332
  • 期刊名称：Applied Surface Science
  • 时间：2011.3.3
  • 页码：8675-8678
  • 相关项目：应力对硅衬底GaN基LED器件光电性能影响的研究
作者： Guangxu Wang|Chuanbiung Xiong|Junlin Liu|Fengyi Jiang|
同期刊论文项目
应力对硅衬底GaN基LED器件光电性能影响的研究
期刊论文 21 专利 7
同项目期刊论文
The effect of silicon doping in the barrier on the electroluminescence of InGaN/GaN multiple quantum
Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting
AlN插入层对硅衬底GaN薄膜生长的影响
牺牲Ni退火对硅衬底GaN基发光二极管p型接触影响的研究
p层厚度对Si基GaN垂直结构LED出光的影响
Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silico
Thermal stability of N-polar n-type Ohmic contact for GaN-based light emitting diode on Si substrate
Stress Distribution in GaN Films grown on Patterned Si (111) Substrates and Its Effect on LED Perfor
Influence of miscut angle of Si(111) substrates on the performance of InGaN LEDs
High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si s
Crystallographic tilting of AlN/GaN layers on miscut Si(111) substrates
Effects of reflector-induced interferences on light extraction of InGaN/GaN vertical light emitting
Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate
硅衬底GaN基单量子阱绿光LED量子效率的研究
Si衬底LED薄膜芯片Ni/Ag反射镜保护技术
图形硅衬底GaN基发光二极管薄膜去除衬底及AlN缓冲层后单个图形内微区发光及应力变化的研究
硅衬底氮化镓基LED薄膜转移至柔性黏结层基板后其应力及发光性能变化的研究
硅基板和铜基板垂直结构GaN基LED变温变电流发光性能的研究
Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon
牺牲Ni退火对硅衬底GaN基发光二极管p型接触影响的研究术