中文摘要：

利用化学溶液沉积（CSD）法,在Pt/Ti/SiO2/Si（100）衬底上成功制备以B3.15Nd0.85Ti3－xNbxO12（BNTNx,x=0.01,0.03,0.05,0.07）薄膜作为栅介质层、以ZnO薄膜作为有源层的铁电薄膜晶体管（ZnO/BNTN铁电TFT）。研究了Nb含量对BNTN薄膜微结构、介电和铁电性能的影响。结果表明,BNTN0.03薄膜的剩余极化（2Pr）最大（71.4μC/cm^2）,介电常数最大（370）。测得BNTNx薄膜的居里温度约为410℃,介电损耗（tanδ）约为0.02。ZnO/BNTN铁电TFT相比ZnO/SiO2层TFT,有较好的输出特性和转移特性,其阈值电压、沟道迁移率、存储窗口和开关电流比分别达到了2.5V、5.68cm^2/Vs、1.5V和1.8×10^5。

英文摘要：

ZnO-based thin film transistors （ZnO -TFTs） were fabricated with Nb/Nd codoped Bi4Ti3O12 ferroeledctric thin film as gate dielectric layer.The B3.15Nd0.85Ti 3-xNbxO12 （BNTN x,x=0.01,0.03,5,0.07） thin film was prepared on Pt/Ti/SiO2/Si（100） substrate by chemical solution deposit ion method.The effects of Nb content on micro-structure,dielectric property and ferroelectricity of BNTNx f ilms have been studied.The BNTN0.03 film has the largest remanent polarization and dielectric constan t,which are 71.4μC/cm^2and 370, respectively.The measured Curie temperature of BNTNx f ilms is about 410℃ and the dielectric loss is around 0.02.ZnO/BNTN ferroelectric TFT,compared with ZnO/SiO2TFT,has superior outpu t characteristic and transfer characteristic.The values of threshold voltage,cha nnel mobility,memory window and current on/off ratio are 2.5V,5.68cm2/Vs,1.5V and 1.8×10^5,respectively.