中文摘要：

利用低温（200℃）生长的GaAs材料作为吸收层制备了GaAs基1．55μm谐振腔增强型（RCE）光电探测器，对其光电特性进行了分析、研究．无光照0偏压下探测器暗电流为8．0×10^12A；光电流谱峰值波长1563nm；响应谱线半宽4nm，具有良好的波长选择性．

英文摘要：

1. 55 μm resonant cavity enhanced photodetector was fabricated using low-temperature grown GaAs as the absorption layer. Its electrical and optical characteristics were investigated. Under 0 V bias without incident light the dark current was 8×10^-11 A, the peak wavelength of the photocurrent was 1563 nm with fullwidth at half maximum（FWHM） 4 nm.