中文摘要：

<正>An InGaSb/AIGaAsSb compressively strained quantum well laser emitting at 2μm has been fabricated. An output power of 82.2 mW was obtained in continuous wave(CW) mode at room temperature.The laser can operate at high temperature(T = 80℃),with a maximum output power of 63.7 mW in CW mode.

英文摘要：

An InGaSb/A1GaAsSb compressively strained quantum well laser emitting at 2 #m has been fabricated. An output power of 82.2 mW was obtained in continuous wave （CW） mode at room temperature. The laser can operate at high temperature （T = 80 °C）, with a maximum output power of 63.7 mW in CW mode.