中文摘要：

本文采用溶液燃烧法,在较低温度下成功制备出非晶ZnTiSnO（ZTTO）薄膜,用作沟道层制备薄膜晶体管（TFT）。研究了Ti掺入对薄膜的结构、光学性能、元素化学态以及对TFT器件电学性能影响。研究结果表明,所制得的ZTTO薄膜均为非晶结构,可见光透过率大于84%;适量Ti的掺入可作为载流子抑制剂有效降低薄膜中的氧空位缺陷浓度,从而提升TFT器件性能。当Zn/Ti摩尔百分比为30/1时,ZTTO TFT性能良好,开关比可达3.54×10^5。

英文摘要：

Amorphous ZnTiSnO （ZTTO） thin films were prepared by the combustion-solution method at low temperatures. Thin-film transistors （TFTs） were fabricated using the ZTTO film as the channel layer. The effects of introduced Ti on the film properties （e. g. , structural and optical properties and chemical states of elements） and device behavior of the TFTs were investigated in detail. The results show that all films are in an amorphous state and display a high average transmittance over 84% in the visible light region. A moderate Ti content in the matrix can act as carrier inhibitor to effectively reduce the density of oxygen vacancy defects, and so the TFT behaviors are improved. When the molar ratio of Zn/Ti is 30/1, the ZTTO TFTs exhibit acceptable performances with an on/off current ratio of 3.54 ×10^5.