欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
半导体材料及其光电器件如激光器、探测器以及高速微波器件有着广阔的应用前景。半导体材料的结构和缺陷特性对器件性能起着至关重要的影响,然而对材料进行纳米尺度下的检测、表征无论是理论上还是技术和设备上都需要深入研究和发展,因此扫描近场光学显微技术在半导体材料表征领域有着无可替代的地位。扫描近场光学显微技术突破了传统光学显微技术的衍射分辨率极限的限制,具有超高空间分辨率、超高探测灵敏度等特点,并且是一种非接触性探测,具有无损伤性。简要介绍了扫描近场光学显微镜的原理及在半导体材料研究中的应用,包括量子阱结构中的位错及缺陷的表征,半导体器件的表面复合速率及扩散长度的纳米表征,以及半导体薄膜中的缺陷分布的检测。探讨了目前相关研究领域存在的主要问题,并对其发展趋势和前景进行了展望。
英文摘要：
Semiconductor materials and their photoelectric devices such as laser,detector,and high rate microwave devices have a wide application prospect.The structure and defects charaterization of semiconductor materials are important for the performance of the devices.However,measurement and charateristic technique at nanometer scale still need to be studied and developed,not only for theory but also for technology and equipment.Then scanning nearfield optical microscopy has the irreplaceable position in the domain of semiconductor materials characterization.The scanning near-field optical microscopy breaks through the resolution limit of traditional optical microscopy which is caused by diffraction limit,and possesses some merits such as super-high spatial resolution,high detection sensitivity,etc.,and is also a kind of non-contact detection,in addtion with no damage.Herein the principle of scanning nearfield optical microscope,and the applications in semiconductor materials research are briefly introduced,including characterization of dislocation and defects in quantum well structure,characterization of surface recombination rate and diffusion length of semiconductor devices at a nanometer level,as well as detecting distribution of the defects in semiconductor thin film.A disscusion on the main problems existing in current research field is conducted,and an expectation of the development trend and prospect is proposed.
同期刊论文项目
同项目期刊论文
Thermal analysis of 980-nm optically pumped vertical-external-cavity surface emitting lasers with DB
High beam quality 978 nm optically pumped vertical external cavity surface emitting semiconductor la
Tailoring the photoluminescence characteristics of p-type GaSb: The role of surface chemical passiva
The effects of shell characteristics on the UV photoresponse behaviors of photoconductivity based on
期刊信息
位置：