中文摘要：

利用中频磁控溅射方法沉积制备了掺铒A12O3薄膜，室温下测量了薄膜在1535nm波长处的光致发光光谱和抽运功率、掺铒浓度、退火温度对光致发光光谱强度的影响。结果表明，在真空气压为2×10^-1Pa，氩气流量为70cm^3／s，氧气流量为25～45cm^3/s的条件下，最佳掺铒浓度为1．0at%，最佳退火温度为850℃。

英文摘要：

Er-^3＋ doped Al2O3 films were fabricated by medium frequency magnetron sputtering, strong photoluminescence at 1535 nm was detected at the room temperature. The influence of pump power, Er3 ＋ concentration, annealing temperature and different substrate on photoluminescence intensity was discussed. The results show optimized Er3＋ concentration is 1.0 at%, the annealing temperature is 850℃ under 2 × 10^-1 Pa, Ar flow 70cm^3/s and O flow 25cm^3/s.