分析了杂质Al元素在工业硅中的存在形式,并采用加压浸出方法对其进行有效去除。比较了盐酸浓度、反应温度、反应压强、液固比、硅粉颗粒粒度、反应时间等因素对杂质Al脱除效率的影响。实验结果表明,加压浸出过程的较佳反应条件为盐酸浓度4 mol·LT^-1,反应温度150~160℃,反应压强1.5~1.6 MPa,硅粉最大颗粒尺寸为50μm,液固比:4∶1,反应时间2 h,在此反应条件下,杂质Al的去除效率达到75%,重现性实验研究表明加压浸出处理后的工业硅中杂质Al的残余量小于3×10^-4。
The removal of pressure leaching of purification of metallurgical grade silicon with hydrochloric acid was investigated. The influences of acid concentration, temperature, pressure, particle size of raw material, ratio of solid to liquid and reaction time on theremoval of aluminum were compared. The results showed that the optimum operation conditions for pressure leaching were acid concentration of mol·LT^-1 , reaction temperature of 150~160℃, total pressure of 1.5 ~ 1.6 MPa, the particle size of less than 50 p,m, sol-id to liquid ratio of 4: 1, and reaction time of 2 h. The removal efficiency of impurity aluminum was up to 75%. And the results of reproducible experiments showed that the residual of aluminum in metallurgical grade silicon was less than 3×10^-4.