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中文摘要：
利用射频磁控溅射法分别溅射ZnO中间层和Ga2O3薄膜到Si（111）衬底上，然后ZnO／Ga2O3薄膜在管式石英炉中常压下通氨气进行氨化，高温下ZnO在氨气气氛中被还原生成Zn而升华，而在不同的氨化时间下Ga2O3和氨气反应合成出GaN纳米棒和纳米颗粒。X射线衍射（XRD）测量结果表明，利用该方法制备GaN纳米棒和颗粒具有沿c轴择优取向生长的六方纤锌矿结构。利用扫描电子显微镜（SEM）、透射电子显微镜（TEM）、傅里叶红外透射谱（FTIR）及选区电子衍射（SAED）观测和分析了样品的形貌、成分和晶格结构。研究分析了此种方法合成GaN纳米结构的反应机制。
英文摘要：
ZnO middle layer and Ga2O3 thin film were sputtered in turn on Si （111） substrate using radio frequency （RF） sputtering system. Then ZnO/Ga2O3 film was ammoniated in tube furnace in the flowing NH3 ambience under normal pressure. ZnO was deoxidized to produce metal Zn and sublimated in NH3 ambience at high temperature. At the same time Ga2O3 reactived to NH3 to synthesize GaN nanorods and nanograins. The measurement result of X-ray diffraction （XRD） revealed that the c axis orientation is preferential in the growth of GaN nanorods and nanograins with hexagonal wurtzite structure. The morphology, component and structure of GaN samples were studied by scanning electron microscope （SEM）, transmission electron microscope （TEM）, Fourier transform infrared spectrophotometer （FTIR） and the selected area electron diffraction （SAED） . The mechanism of the synthesis of GaN nanostructure through this method was studied.
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