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Theoretical study of cesium and oxygen activation processes on GaN(0001) surface
  • ISSN号：1369-8001
  • 期刊名称：Materials Science in Semiconductor Processing
  • 时间：2015.4.23
  • 页码：61-66
  • 相关项目：基于纳米粗化和内建电场的日盲紫外AlGaN阴极材料研究
作者： 陈亮|
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基于纳米粗化和内建电场的日盲紫外AlGaN阴极材料研究
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