位置：成果数据库 > 期刊 > 期刊详情页
Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temp
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：1459-1465
  • 语言：英文
  • 相关项目：In2O3纳米线阵列的外延生长、掺杂及其应用研究
作者： Lu, Aixia|Jiang, Jie|Sun, Jia|Wan, Qing|
同期刊论文项目
In2O3纳米线阵列的外延生长、掺杂及其应用研究
期刊论文 26 获奖 4
同项目期刊论文
Branched growth of degenerately Sb-doped SnO2 nanowires
Fully transparent thin-film transistor devices based on SnO2 nanowires
High surface-enhanced Raman scattering activity from Au-decorated individual and branched tin oxide
High-mobility transparent thin-film transistors with an Sb-doped SnO 2 nanocrystal channel fabricate
Ultralow-voltage transparent electric-double-layer thin-film transistors processed at room-temperatu
Individual SnO2 nanowire transistors fabricated by the gold microwire mask method
Degenerately Mo-doped In2 O3 nanowire arrays on In2 O3 microwires with metallic behaviors
Low-voltage ZnO thin-film transistors operating at 2.0V gated with mesoporous SiO(2) dielectric proc
Assembly of Nanoscale Organic Single-Crystal Cross-Wire Circuits
Microporous SiO(2) with huge electric-double-layer capacitance for low-voltage indium tin oxide thin
Tailoring optical transmission via the arrangement of compound subwavelength hole arrays
Gas sensors based on semiconducting metal oxide one-dimensional nanostructures
Doping-dependent electrical characteristics of SnO2 nanowires
Branched SnO2 nanowires on metallic nanowire backbones for ethanol sensors application
Degenerate doping induced metallic behaviors in ZnO nanobelts
磁台阶势垒结构中二维电子气的自旋极化输运
Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary