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Shallow-donor impurity in vertical-stacked InGaN/GaN multiple-quantum wells: Electric field effect
  • ISSN号：1386-9477
  • 期刊名称：Physica E: Low-dimensional Systems and Nanostructu
  • 时间：0
  • 页码：458-461
  • 相关项目：GaN基量子结构的非线性光学性质
作者： Xia, Congxin|Zeng, Zaiping|Wei, Shuyi|Wei, Jingbo|
同期刊论文项目
GaN基量子结构的非线性光学性质
期刊论文 28
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