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中文摘要：
本工作采用化学气相淀积方法,以GeH4为反应气源,以InN/GaN/Al2O3(0001)复合衬底作陪片,在GaN/Al2O3(0001)复合衬底上外延生长了Ge薄膜,并对生长机理进行了探讨。研究结果表明:直接在N2气氛下外延得到了多晶Ge薄膜,表面较平整,由吸收光谱得出其带隙宽度为0.78eV;经过H2预处理,GaN/Al2O3复合衬底表面出现金属In的沉积,外延Ge薄膜沿(111)方向择优生长,晶体质量较高。
英文摘要：
The Ge films were grown by chemical vapor deposition(CVD),with GeH4 as the source of reactive gas,on GaN/Al2O3(0001)composite substrates.The microstructures and optical properties of the Ge epitaxial films were characterized with X-ray diffraction(XRD),Raman spectroscopy,scanning electron microscopy(SEM)and atomic force microscopy(AFM).The results show that smooth and compact polycrystalline Ge films,with a band-gap of 0.78 eV,can be deposited in N2 atmosphere.Moreover,the pretreatment of H2 results in depo...
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