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中文摘要：
介绍了Si1-xGex合金材料在制作新型光电子器件方面的重要作用,描述了应变SiGe层的特性,包括其临界厚度与Ge组分的关系、能带变窄、折射率增加,以及应变SiGe层的亚稳态特性。设计了应变锗硅缓冲层上的高Ge组分PIN光电探测器的外延材料和结构,采用Silvaco软件分别对光电探测器的器件结构、光谱响应、响应电流及其随入射光功率的变化、器件的暗电流进行了模拟,结果显示,探测器有源区面积增大,其响应电流也增大,且暗电流比其响应电流小6～8个数量级;探测器的响应时间约为3.8×10^-9s;探测器在850nm左右具有较好的光响应;这些结果都比较理想。采用L-edit软件设计了该光电探测器的结构,最后对研究结果做出总结。
英文摘要：
Si1-xGex is an important material to fabricate new type photoelectronic device. Characteristics of SiGe strain layers were described, including the relation between critical thickness of SiGe strain layers and Ge composition, the narrowed energy bandgap , the increased refractive index and the metastable state of SiGe strain layers. Epitaxial materials and device structures of high Ge content PIN photo-detector on SiGe buffer layers had been designed. The device＇s structure, spectral response, response current and its changing with incident light strength, and the dark current were simulated by using software Silvaco.The results show that the response electric current increases with the active area increasing, and the dark current is 6-8 orders of magnitude smaller than response electric current. The response time of the detector is about 3.8×10^-9 s and its spectral response is very well at about 850 nm. The structure of the photo-detector was designed by using L-edit,and the results were summarized at last.
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