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A comparative study of YBa2Cu3O7-δ/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN25[电子电信—物理电子学] TG132.26[金属学及工艺—合金;一般工业技术—材料科学与工程;金属学及工艺—金属学]
  • 作者机构：[1]School of Physics and Electronics Science, Shanxi Datong University, Datong 037009, China, [2]National Laboratory for Superconductivity, Institute of Physics & Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant Nos 50672125 and 10574154）, the Natural Science Foundation of Shanxi Province, China （Grant No 2009011003-1）, and the Youth Foundation of Shanxi Datong University, China （Grant No 2007Q10）.
作者： 王萍[1,2], 李洁[2], 陈莺飞[2], 李绍[2], 王佳[2], 解廷月[1], 郑东宁[2]
关键词： YBA2CU3O7, 双层薄膜, 二氧化锆, 硅绝缘体, 预处理, 高频, 基板, SOI衬底, pulsed laser deposition, thin film, pretreatment, SOI substrate
中文摘要：

Corresponding author. E-mail： dzheng@ssc.iphy.ac.cn

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
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  • 被引量:406