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Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：1-5
  • 语言：英文
  • 相关项目：在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
作者： Jiang, Zui-Min|Shao, Yuan-Min|Nie, Tian-Xiao|Yang, Xin-Ju|Zou, Jin|Lin, Jin-Hui|Fan, Yong-Liang|Chen, Zhi-Gang|Wu, Yue-Qin|
同期刊论文项目
在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
期刊论文 9 会议论文 9
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