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Time delay in InGaN multiple quantum well laser diodes at room temperature
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN248.1[电子电信—物理电子学] TN248[电子电信—物理电子学]
  • 作者机构：[1]State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China, [2]Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant Nos. 60976045, 605060011 60836003 and 60776047）, the National Basic Research Program of China （Grant No. 2007CB936700）, and the National Natural Science Foundation for Distinguished Young Scholars of China （Grant No. 60925017）.
作者： 季莲[1], 江德生[1], 张书明[1], 刘宗顺[1], 曾畅[1], 赵德刚[1], 朱建军[1], 王辉[1], 段俐宏[1], 杨辉[2]
关键词： 激光二极管, 氮化铟镓, 多重量子井, 室温, 延时, 激光辐照效应, 电流脉冲, 时间延迟, InGaN, laser diode, delay effect, saturable absorber, traps
中文摘要：

Corresponding author. E-mail： jilian@red.semi.ac.cn

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406