中文摘要：

利用磁控溅射法，采用亚分子分层掺杂技术交替溅射Co靶和ZnO靶，在si衬底上制备了不同氢氩流量比的H：ZCO薄膜样品，研究了氢氩流量比对薄膜结构特性和磁学性能的影响。所制备的薄膜样品具有c轴择优取向。由于H对表面和界面处悬挂键的钝化作用，随H2流量比的增加，薄膜的：怿优取向变差。磁性测量结果显示，薄膜样品的铁磁性随着氢氩流量比的增大而增强。XPS结果表明，随着H含量的增大，金属态Co团簇的相对含量逐渐增加，而氧化态Co离子的相对含量逐渐减小。H：ZCO样品中的铁磁性可能来源于co金属团簇，H的掺入促使ZnO中的co离子还原成Co金属团簇，从而增强了薄膜样品的室温铁磁性。

英文摘要：

H： ZCO thin films we：re prepared with different qv （H2）：qv （Ar ＋ H2 ） by using submole- eule doping technique, where the magnetic sputtering of Co and ZnO were alternatively performed onto silicon substrates. The effect of qv （ H2 ） ： qv （ Ar ＋ H2 ） on the structural and magnetic properties in films was investigated. All the prepared thin films have a c-axis preferential orientation, and the intensity of （002） diffraction peak decreases with the increase of qv （ It2 ） ： qv （ Ar ＋ H2 ） in films be- cause the doping hydrogen can passivate the dangling bonds at the surfaces and[ grain boundaries. Magnetic measurement shows that the ferromagnetism is enhanced with the qv （ H2 ） ： qv （ Ar ＋ H2 ） in- creasing. XPS results exhibit that the relative content of Co metal clusters gradually increases, and the relative content of oxidized Co ions gradually decreases with the increase of It2 ratio. According to the above results, it is suggesl：ed that the ferromagnetism in H： ZCO thin film originates from Co metal clusters, and more oxidized Co ions is reduced to Co metal clusters with H2 doping, therefore the ferromagnetism is enhanced.