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直拉硅单晶中氢行为的研究进展
  • ISSN号：1005-023X
  • 期刊名称：《材料导报》
  • 时间：0
  • 分类：TN304.12[电子电信—物理电子学]
  • 作者机构：[1]浙江大学硅材料国家重点实验室,杭州310027
  • 相关基金：国家自然科学基金（60225010）;教育部新世纪优秀人才支持计划（NCET-04-0537）
作者： 李金刚[1], 杨德仁[1], 马向阳[1], 阙端麟[1]
关键词： 氢, 氧扩散, 热施主, 氧沉淀, 空洞型缺陷, hydrogen, oxygen diffusion, thermal donor, oxygen precipitates,void-type defects
中文摘要：

总结了氢对直拉硅（CZ）单晶中缺陷影响的研究进展，主要介绍了氢促进氧扩散、热施主和氧沉淀生成，以及高温氢气退火促进直拉硅片空洞型缺陷消除的机理，其中氢促进硅中氧的扩散被认为是氢对直拉硅中的缺陷产生影响的主要原因。

英文摘要：

The research on the behavior of hydrogen in czochralski （CZ） silicon is reviewed. The mechanisms for the effect of hydrogen on the enhancement of oxygen diffusion and formation of thermal donors and oxygen precipitates are introduced. At the same time, the effect of hydrogen annealing on the reduction of void-type defects in CZ silicon is also summar,zed. It is believd that the enhancement of oxygen diffusion by hydrogen is the primary reason for the effect of hydrogen on the defects in CZ silicor

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期刊信息
  • 《材料导报：纳米与新材料专辑》
  • 主管单位:重庆西南信息有限公司(原科技部西南信息中心)
  • 主办单位:重庆西南信息有限公司(原科技部西南信息中心)
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  • 电话：023-67398525
  • 国际标准刊号：ISSN：1005-023X
  • 国内统一刊号：ISSN：50-1078/TB
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  • 被引量:3397