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Finite size effect on the Raman frequency of phonons in nano-semiconductors
  • ISSN号:1674-1056
  • 期刊名称:《中国物理B:英文版》
  • 时间:0
  • 分类:O435.1[机械工程—光学工程;理学—光学;理学—物理] TB383[一般工业技术—材料科学与工程]
  • 作者机构:[1]School of Physics, Peking University, Beijing 100871, China, [2]Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100080, China, [3]International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, and State Key Laboratory of Silicon MateriMs & Department of MateriMs Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • 相关基金:Project supported by the National Basic Research Program of China (Grants Nos. 2009CB929403 and 2012CB825700) and the National Natural Science Foundation of China (Grants Nos. 10774006 and 60876002).
中文摘要:

A comprehensive study on Raman spectroscopy with different excitation wavelengths, sample sizes, and sample shapes for optic phonons (OPs) and acoustic phonons (APs) in polar and non-polar nano-semiconductors has been performed. The study affirms that the finite size effect does not appear in the OPs of polar nano-semiconductors, while it exists in all other types of phonons. The absence of the FSE is confirmed to originate from the long-range Fr¨ohlich interaction and the breaking of translation symmetry. The result indicates that the Raman spectra of OPs cannot be used as a method to characterize the scale and crystalline property of polar nano-semiconductors.

英文摘要:

A comprehensive study on Raman spectroscopy with different excitation wavelengths, sample sizes, and sample shapes for optic phonons (OPs) and acoustic phonons (APs) in polar and non-polar nano-semiconductors has been performed. The study affirms that the finite size effect does not appear in the OPs of polar nano-semiconductors, while it exists in all other types of phonons. The absence of the FSE is confirmed to originate from the long-range FrShlieh interaction and the breaking of translation symmetry. The result indicates that the Raman spectra of OPs cannot be used as a method to characterize the scale and crystalline property of polar nano-semiconductors.

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期刊信息
  • 《中国物理B:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编:欧阳钟灿
  • 地址:北京 中关村 中国科学院物理研究所内
  • 邮编:100080
  • 邮箱:
  • 电话:010-82649026 82649519
  • 国际标准刊号:ISSN:1674-1056
  • 国内统一刊号:ISSN:11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406