研究了等离子显示器中Sc掺杂对MgO介质保护薄膜外逸电子发射性能的影响。测试出无掺杂和Sc掺杂MgO薄膜在不同温度条件下的外逸电子发射电流,并基于理论模型模拟计算外逸电子发射电流对比实验结果。结果表明Sc掺杂加深了MgO禁带中的电子陷阱深度,延长了MgO薄膜的外逸电子发射的衰减时间。Sc掺杂MgO薄膜具备了持续发射外逸电子的能力,能够实现等离子显示器放电单元稳定快速的寻址。
The influence of the Sc-doping on the exo-electron emission characteristics of the MgO protection layers in plasma display panel(PDP) was simulated.The simulated results show that the Sc-doping significantly deepens the electron trap levels in the MgO band gap,and lengthens the decay time in exo-electron emission.In addition,the Sc-doping of the MgO films was found to improve the stability and sustainable emission of the exo-electron,and enables the PDD cell to achieve a faster and more stable address discharge.To test the simulated results,a prototyped 2 inch PDP was constructed.The experimental results agree fairly well with those of the simulation.