中文摘要：

With extensive use of flash-based field-programmable gate arrays(FPGAs) in military and aerospace applications, single-event effects(SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we present SEE experimental study of a flash-based FPGA from Microsemi Pro ASIC3 product family. The relation between the cross section and different linear energy transfer(LET) values for the logic tiles and embedded RAM blocks is obtained. The results show that the sequential logic cross section depends not too much on operating frequency of the device. And the relationship between 0 →1 upsets(zeros) and 1 →0 upsets(ones) is different for different kinds of D-flip-flops. The devices are not sensitive to SEL up to a LET of 99.0 Me V cm2/mg.Post-beam tests show that the programming module is damaged due to the high-LET ions.

英文摘要：

With extensive use of flash-based field-pro- grammable gate arrays （FPGAs） in military and aerospace applications, single-event effects （SEEs） of FPGAs induced by radiations have been a major concern. In this paper, we present SEE experimental study of a flash-based FPGA from Microsemi ProASIC3 product family. The relation between the cross section and different linear energy transfer （LET） values for the logic tiles and embedded RAM blocks is obtained. The results show that the sequential logic cross section depends not too much on operating frequency of the device. And the relationship between 0 → 1 upsets （zeros） and 1 → 0 upsets （ones） is different for different kinds of D-flip-flops. The devices are not sensitive to SEL up to a LET of 99.0 MeV cm2/mg. Post-beam tests show that the programming module is damaged due to the high-LET ions.