采用磁控溅射法制备Ti-O薄膜,然后采用等离子体浸没离子注入设备,以氢气作为离子注入源,轰击至钛氧薄膜表面,使其产生羟基基团。并对注入后样品进行酸活化,以期得到更多的羟基。采用傅立叶红外光谱仪(FTIR)、X射线衍射(XRD)、X射线光电子能谱仪(XPS)、扫描电子显微镜(SEM)等对材料表面的结构、成份、官能团变化进行表征。研究结果显示,Ti-O薄膜经H^+注入后再进行活化,磁控溅射Ti-O薄膜得到明显增多的羟基。
In this paper, the TiO2 films were prepared by unbalanced magnetron sputtering deposition system. To obtain hydroxyl group, the films were treated by plasma immersion H^+ ion implantation. The films were then activated by acid solution. The surface characteristics of samples were investigated by fourier transfer infrared spectrum (FTIR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scan electronic microscope (SEM). The results showed that the implanted films were easier to obtain hydroxyl group after activated by acid solution.