欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
采用光学传递矩阵方法设计了紫外波段Si02／Si3N4介质膜分布式布拉格反射镜，并利用等离子体增强化学气相沉积技术在蓝宝石（0001）衬底上制备了Si02／Si3N4介质膜分布式布拉格反射镜．光反射测试表明，样品反射谱的峰值波长仅与理论模拟谱线相差10nm，并随着反射镜周期数的增加而蓝移．由于Si02与Si3N4具有相对较大的折射率比，因而制备的周期数为13的样品反射谱的峰值反射率就已大于99％．样品反射谱的中心波长为333nm，谱峰的半高宽为58nm．样品截面的扫描电子显微镜和表面的原子力显微镜测量结果表明，样品反射谱的中心波长蓝移是由子层的层厚和界面粗糙度的变化引起的．x射线反射谱表明，子层界面过渡层对于反射率的影响较小，并且Si02膜的质量比Si3N4差，也是造成反射率低于理论值的原因之一．
英文摘要：
In this paper, we design a SiO2/Si3N4 dielectric distributed Bragg reflector （DDBR） by the transfer-matrix method, which is grown by plasma-enhanced chemical vapor deposition on sapphire （0001）. There exists a slight difference between theoretical and experimental results in peak wavelength （- 10 nm）. The peak wavelength is blue shifted with the number of DDBR pairs increasing. The 13-pair DDBR provides a 58 nm wide stop band centered at 333 nm with a maximal reflectivity of higher than 99%, as the refractive index ratio of Si3N4 to SiO2 is relatively high. It is proved by the scanning electron microscope and atomic force microscope measurements that the variations of thickness and roughness of Si3N4 layer with respect to SiO2 layer during growth contribute to the blue shift of peak wavelength. The X-ray reflectivity measurements indicate that the interfacial degradation of the samples has little effect on the maximum reflectivity, and the relatively poor quality of SiO2 compared with Si3N4 may be one of the reasons that cause the difference between the measurements and simulations.
同期刊论文项目
同项目期刊论文
Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nan
Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-
Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zin
Performance comparison of front- and back-illuminated AlGaN-based metal-semiconductor-metal solar-bl
Bias-selective dual-operation-mode ultraviolet schottky-barrier photodetectors fabricated on high-re
Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-met
Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film T
High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN t
Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal-Semiconductor-Metal Photodetectors for High-Tem
Improvements in Microstructure and Leakage Current of High-In-Content InGaN p-i-n Structure by Annea
High Quantum Efficiency GaN-Based p-i-n Ultraviolet Photodetectors Prepared on Patterned Sapphire Su
Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Qua
Investigation of optical properties of InGaN-InN-InGaN/GaN quantum-well in the green spectral regime
Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfa
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuat
Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1-xN films with
Study of Rashba spin splitting and intersubband spin-orbit coupling effect in AlGaN/GaN quantum well
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100)
The growth and properties of m-plane InN epilayer on LiAlO2(100) by metal-organic chemical vapor dep
Ultraviolet emission efficiencies of Al(x)Ga(1-x)N films pseudomorphically grown on Al(y)Ga(1-y)N te
Influence of biaxial strain on near-band-edge optical properties of c- and a-plane wurtzite-InN film
AlGaN-based 330 nm resonant-cavity-enhanced p-i-n junction ultraviolet photodetectors using AlN/AlGa
The parameters in the band-anticrossing model for In (x) Ga1-x N (y) P1-y before and after annealing
Effectr of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped
Temperature dependence of the point defect properties of GaN thin films studied by terahertz time do
Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoim
Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN
A Band-Gap Energy Model of the Quaternary Alloy In_xGa_yAl_(1-x-y)N using Modified Simplified Cohere
Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phas
The Research on GaN Based Multiple Quantum Well LEDs withNanopillar Arrays for EnhancingLight-emitti
A modified simplified coherent potential approximation model of band gap energy of III-V ternary all
Design and fabrication of SiO2/Si3N4 dielectric distributed Bragg reflectors for ultraviolet optoele
The parameters in the band-anticrossing model for In (x) Ga(1-x) N (y) P(1-y) before and after annea
Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiA
期刊信息
位置：