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中文摘要：
针对C／SiC低温氧化易失效的不足，研究了CVIB—C基体改性2DC／SiC在700℃湿氧中100MPaF加载至60h的氧化行为，利用SEM和TEM观察了改性材料不同服役时间的微结构特征，揭永了演变规律．研究表明，CVIB－C基体改性使C／SiC低温抗氧化能力显著提升．基体裂纹及其在应力加载下的开裂均为氧化气体提供进入通道，而后可被B－C氧化产物B2O3封填，抑制内部C消耗．CVIB—C与其氧化产物一同参与缺陷愈合．在60h内，B—C改性层愈合能力尚未完全发挥，可服役更长时间．
英文摘要：
Oxidation behavior of 2D C/SiC composites modified by boron carbide self-sealing matrix was invesrgated at low temperature of 700℃ in wet oxygen. Oxidation tests were conducted under a creep stress of 100MPa up to 60h. Microstructural evolution of the modified composites was explored by SEM and TEM. Results show that the modified composites hold better inoxidizability than the conventional C/SiC composites, which is caused by the self-heal of matrix cracks （and the stress enlarged ones） with oxidation induced B2O3 and the inhibition of C oxidation. The unoxidized B-C is identified as a coagent of B2O3 to fulfill the healing. Healing ability of the modified matrix is preserved in 60h and is valid for longer periods of time.
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