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中文摘要：
在有效质量近似下，运用变分法计算了闪锌矿GaN／AIGaN耦合量子点中类氢杂质的施主束缚能．数值结果显示了类氢杂质的施主束缚能很大程度依赖于杂质位置和耦合量子点结构参数，当杂质位于量子点中心时，施主束缚能最大，而且随着中间垒宽的增加，杂质束缚能保持着先增加，然后不变的趋势．
英文摘要：
Within the framework of the effective-mass approximation, the donor binding energy of hydrogenic impurity states confined in a zinc-blende （ZB） GaN/AlxGal-xN coupling quantum dot s （CQDs） are investigated by means of a varia- tional approach. Numerical results show that the donor binding energy is highly dependent on the impurity position and CQDs structural parameters. When the impurity is located at the center of the quantum dot, the donor binding energy Eb is largest. And the Eb is increased firstly and then unobvious with the increasing of the barrier width.
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