中文摘要：

AIN是一种重要的半导体材料，由于具有宽带隙、高临界击穿电场、高热导率、高载流子饱和漂移速度等优越的特性，在微电子和光电子领域具有广泛的应用前景。本文综述了国际上AIN单晶生长的研究进展，对其结构特点、生长方法的选择、生长过程中的问题及存在的结构缺陷等方面进行了介绍。

英文摘要：

As an important semiconductor material, A1N has a bright future in the microelectronic and optoelectronic fields with its unique combination of properties such as wide bandgap, high breakdown field, high thermal conductivity and high saturated electron drift velocity. This paper reviews the research progress in AIN crystal growth. Structural characteristics, growth methods, problems in the growth process and structural defects are also introduced.