中文摘要：

采用直流磁控溅射法沉积了ZnO薄膜,以X射线衍射（XRD）、扫描电镜（SEM）、原子力显微镜等手段对薄膜的晶体结构和微观相貌进行了分析,并对薄膜的电学性能进行了考察。结果表明：所制备薄膜沿c轴高度择优,并具有较高的电阻率;ZnO薄膜的沉积速率和c轴择优度是由O2/Ar气体比例和衬底共同决定的;Au衬底上的ZnO薄膜以三维生长为主,在Al和Si衬底上出现了不同程度的薄膜二维生长;电阻率随O2/Ar气体比例的提高逐渐增加,Si衬底上薄膜的电阻率高于Al和Au衬底上的。

英文摘要：

ZnO films were prepared by using a d. c. magnetron sputtering method. X-ray diffraction （XRD）, scanning electron microscopy （SEM） and atom force microscopy （AFM） were employed to analyze the crystalline and microstructure of the films. Results show that the preferential orientation of c-axis is for all deposited films and the resistivity of films is high. The deposition rate and preferential orientation along c-axis lies on Substrates and O2/Ar gas ratios. The ZnO films deposited on Au substrate shows three-dimenslon growth and films deposited on A1,Si substrates shows partial-two-dimension growth. With the increase of the O2/Ar gas ratios, the resistivity of films is observably enhanced, the resistivity of films＇deposited on Si substrate is highest.