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中文摘要：
采用传统固相反应法制备了不同SiO2掺量的CaCu3Ti4O12（CCTO）陶瓷材料,并研究了SiO2含量对CCTO陶瓷物相结构、微观形貌及介电性能的影响。结果表明：高温烧结时,SiO2不会与CCTO发生固相反应,而作为第二相物质存在于CCTO陶瓷的晶界,并对CCTO陶瓷的微观结构产生不同程度的影响。CCTO陶瓷的介电常数和介电损耗随SiO2含量的增多而相应减小。阻抗分析表明,CCTO陶瓷的晶粒电阻随SiO2的掺入略有改变,而晶界电阻则随SiO2的掺入而显著增大。分析认为,晶界电阻的增大是导致CCTO陶瓷介电损耗降低的主要原因。
英文摘要：
CaCu3Ti4O12 （CCTO） ceramics with the addition of SiO2 were fabricated by the conventional solid-state reaction method. The phase structure, microstructure and the dielectric properties of the CCTO ceramics with different weight percentages of SiO2 were investigated. There was no solid-state reaction between CCTO and SiO2 at the sintering temperature, and the SiO2 additives were observed to be present at the CCTO grain boundaries. It was found that the addition of SiO2 influenced the microstructure and dielectric properties of the CCTO ceramics. The dielectric constant and loss tangent decreased with the increasing content of SiO2. Impedance spectroscopy showed that the grain boundary resistance increased due to the addition of SiO2 to CCTO, which should be main reason for the decrease in the loss tangent of the CCTO ceramics.
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