中文摘要：

在分子束外延（MBE）生长的基础上，采用脉冲阳极氧化工艺制作了非对称、宽波导InGaAlAs／AlGaAs／GaAs应变双量子阱（DQW）结构准连续（QCW）线阵半导体激光器，实现了808nm波段线阵激光器的高效率、高功率运转。脉冲阳极氧化工艺主要用于器件工艺中的蚀刻与绝缘膜制备，电解液采用乙二醇：去离子水：磷酸；2％盐酸的体积比为40；20；1；1的混合溶液。研制的准连续线阵半导体激光器的填充因子约为72．7％，100Hz，200μs准连续工作条件下的阈值电流约为24A，斜率效率达到1．25W／A，最大电-光转换效率达到51％。

英文摘要：

InGaAIAs/AIGaAs/GaAs strained double quantum well （DQW） linear array diode lasers with asymmetric wide waveguide have been successfully fabricated by pulse anodic oxidation process upon molecular beam epitaxy （MBE） material growth, high efficiency and high power quasi-continuous-wave （QCW） output has been realized at 808 nm wavelength. The pulse anodic oxidation process is used to etching and insulating film preparation in QCW device process with electrolyte solution of 4 ： 20 ： 1 ： 1 ratio of glycol ： deionization water ： phosphoric acid ： 2 hydrochloric acid. The fill factor of the prepared linear array is about 72.7%, the threshold current and slope efficiency of the prepared devices are 24 A and 1.25 W/A respectively under QCW operation condition of 100 Hz repetitive frequency and 200μs pulse width, a maximum electrical-optical conversion efficiency of 51% has been achieved.