中文摘要：

增加两 La <啜class=“ a-plus-plus ”>3+和公司<啜class=“ a-plus-plus ”>3+被用来调节微观结构和 BiFeO 的电的性质<潜水艇class=“ a-plus-plus ”> 3 ( BFO )薄电影，并且双性人<潜水艇class=“ a-plus-plus ”> 1x La <潜水艇class=“ a-plus-plus ”> x Fe <潜水艇class=“ a-plus-plus ”> 0.90 公司<潜水艇class=“ a-plus-plus ”> 0.10 O <潜水艇class= a-plus-plus > 3 变瘦电影在 SrRuO 上被种<潜水艇class= a-plus-plus > 3 -buffered 由收音机 fr 的磅涂的硅底层多晶的结构与(110 ) 取向在薄电影被显示出，并且他们的抵抗力戏剧性地作为 La 增加 < 啜 class= “ a-plus-plus ” >3+ 内容增加。他们的绝缘的常数增加，并且绝缘的损失与增加 La 减少 < 啜 class= “ a-plus-plus ” >3+ 内容。另外，他们的铁电体和疲劳性质与升起的 La 被提高 < 啜 class= “ a-plus-plus ” >3+ 内容。有 x 的薄电影?=? 0.03 有最佳电的性质(例如，残余的极化 2P <潜水艇class=“ a-plus-plus ”> r ?~?175.6?C/cm ² ,强制的地 2E <潜水艇class=“ a-plus-plus ”> c ?~?699.5?kV/mm,电介质常数<潜水艇class=“ a-plus-plus ”> r ?~?257 并且黝黑?~? 0.038 )，和好疲劳行为。这些电影的迫切分析被进行鉴别缺点在电导率，和两个跳跃电子期间打字，控告单人赛的氧空缺不管 La 为谷物和谷物边界的传导主要负责 < 啜 class= “ a-plus-plus ” >3+ 内容。作为结果，与两 La 做 < 啜 class= “ a-plus-plus ” >3+ 和公司 < 啜 class= “ a-plus-plus ” >3+ 在 BFO 薄电影的电的性质有益于改进。

英文摘要：

Adding both La3＋and Co3＋was used to tune the microstructure and electrical properties of Bi Fe O3（BFO） thin films, and Bi1-xLaxFe0.90Co0.10O3 thin films were grown on the Sr Ru O3-buffered Pt-coated silicon substrates by a radio frequency sputtering. A polycrystalline structure with（110） orientation was shown in thin films, and their resistivity dramatically increases as the La3＋content increases. Their dielectric constant increases,and dielectric loss decreases with increasing La3＋content.In addition, their ferroelectric and fatigue properties were enhanced with rising La3＋content. The thin films with x = 0.03 have optimum electrical properties（e.g., remanent polarization 2Pr＊ 175.6 l C/cm2, coercive field2Ec＊ 699.5 k V/mm, dielectric constant er＊ 257 and tan d ＊ 0.038）, together with a good fatigue behavior. The impendence analysis of the films was conducted to identify the defects type during conductivity, and both hopping electrons and single-charged oxygen vacancies are mainly responsible for the conduction of grain and grain boundaries regardless of La3＋content. As a result, the doping with both La3＋and Co3＋benefits the improvement in the electrical properties of BFO thin films.