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Recent Progress in GaN-Based Light-Emitting Diodes
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  • 相关项目：R面蓝宝石上A面GaN生长研究
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R面蓝宝石上A面GaN生长研究
期刊论文 10 会议论文 1
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国产SiC衬底上利用AlN缓冲层生长高质量GaN外延薄膜
具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性
Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate
Growth and characteristics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers
The influence of pressure on the growth of a-plane GaN on r-plane sapphire
Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition
The impact of nanoporous SiNx interlayer growth position on high-quality GaN epitaxial films
Threading dislocation density comparison between GaN grown on the patterned and conventional sapphir
利用MOCVD在r面蓝宝石上生长的α面GaN中两步AlN缓冲层的优化(英文)