中文摘要：

硼氧缺点能基于做硼的水晶的硅(c-Si ) 引起商业太阳能电池的严肃的导致光的降级(盖) ，它在也照明劝诱的过量搬运人的注射下面被形成或使用前面的偏爱。在这贡献，我们证明了硼氧缺点的钝化过程能被为太阳能电池的大数量使用前面的偏爱导致，它比轻照明是更多经济。我们使用了这策略触发太阳能电池和使钝化的 emitter 和尾部联系的铝背表面地(Al-BSF )(PERC ) 的批的钝化进程太阳能电池。两种对待的太阳能电池在效率显示出高稳定性并且在房间温度在进一步的照明下面受不了很小的盖。这种技术具有为为工业制造的 c-Si 太阳能电池的盖的抑制的意义。

英文摘要：

Boron-oxygen defects can cause serious lightinduced degradation （LID） of commercial solar cells based on the boron-doped crystalline silicon （c-Si）, which are formed under the injection of excess carriers induced either by illumination or applying forward bias. In this contribution, we have demonstrated that the passivation process of boron-oxygen defects can be induced by applying forward bias for a large quantity of solar cells, which is much more economic than light illumination. We have used this strategy to trigger the passivation process of batches of aluminum back surface field （A1-BSF） solar cells and passivated emitter and rear contact （PERC） solar cells. Both kinds of the treated solar cells show high stability in efficiency and suffer from very little LID under further illumination at room temperature. This technology is of significance for the suppression of LID of c-Si solar cells for the industrial manufacture.