位置：成果数据库 > 期刊 > 期刊详情页
基于0．13μm工艺的8Mb相变存储器
  • ISSN号：1000-3819
  • 期刊名称：《固体电子学研究与进展》
  • 时间：0
  • 分类：TN47[电子电信—微电子学与固体电子学] TN432[电子电信—微电子学与固体电子学]
  • 作者机构：[1]中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,纳米技术研究室,上海200050
  • 相关基金：国家集成电路重大专项资助项目（2009ZX02023-003）;国家重点基础研究发展计划资助项目（2007cB935400,2010CB934300,2011CB309602,2011cB932800）;国家自然科学基金资助项目（60906004,60906003,61006087,61076121）;上海市科委资助项目（09QH1402600,1052nm07000）
作者： 蔡道林[1], 陈后鹏[1], 王倩[1], 丁晟[1], 富聪[1], 陈一峰[1], 宏潇[1], 李喜[1], 陈小刚[1], 刘波[1], 宋志棠[1], 封松林[1]
关键词： 相变存储器, 互补型金属氧化物半导体电路, 疲劳特性, phase change random access memory CMOS circuit endurance characteristics
中文摘要：

采用0．13μm工艺，4层金属布线，在标准CMOS技术的基础上增加3张掩膜制备了一款8Mb相变存储器。1．2V的低压NMOS管作为单元选通器，单元大小为50F2外围电路采用3．3V工作电压的CMOS电路。Set和Reset操作电流分别为0．4mA和2mA。读出操作的电流为10μA，芯片疲劳特性次数超过了10^8。

英文摘要：

An 8 Mb phase change random access memory is developed in a 0. 13 μm 4-ML standard CMOS technology. The storage element is integrated using 3 additional masks with respect to process baseline. The cell selector is implemented by a standard 1.2 V NMOS device, achieving a cell size of 50 F2. 3.3 V CMOS devices are used for the peripheral circuit. The current of the Set operation and the Reset operation is 0.4 mA and 2 mA, respectively. 10μA current offers to readout operation. The endurance characteristics is measured to be over 10^8.

同期刊论文项目
新型纳米复合相变材料的制备及其在相变存储器中的应用
期刊论文 59 专利 17
　纳米测量技术标准的基础研究
期刊论文 19
Si基新型相变材料（Si-Sb-Te）及其器件基础研究
期刊论文 39
新型相变材料的设计与优选
期刊论文 35
三维立体堆叠相变存储器制造方法探索
期刊论文 36
　基于纳米结构的相变机理及嵌入式PCRAM应用基础研究
期刊论文 16
　相变存储器规模制造技术关键基础问题研究
期刊论文 24
同项目期刊论文
Phase Change Memory Cell Using Si2Sb2Te3 Material
Si(3.5)Sb(2)Te(3) Phase Change Material for Low-Power Phase Change Memory Application
Nano composite Si2Sb2Te film for phase change memory
Ab initio study of Sb(2)Se(x)Te(3-x)(x=0, 1, 2) phase change materials
Instability of nitrogen doped Sb(2)Te(3) for phase change memory application
Experimental and theoretical study of silicon-doped Sb(2)Te(3) thin films: Structure and phase stabi
Si2Sb2Te6 Phase Change Material for Low-Power Phase Change Memory Application
Local atomic structure in molten Si3Sb2Te3 phase change material
Scaling properties of phase-change line memory
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
一种具有掉电数据保持功能的触发器设计
基于相变存储器器件单元的电流脉冲测试系统
Ge_2Sb_2Te_5的化学机械抛光研究进展
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
基于PCRAM数据页聚簇的缓冲算法
一种滞环恒流LED驱动电路的电流采样电路
Thermal effect of Ge2Sb2Te5 in phase change memory device
大电流负载的片上LDO系统设计
Phase Change Characteristics of SiO2 Doped Sb2Te3 Materials for Phase Change Memory Application
Sb-rich Si-Sb-Te Phase-Change Material for Phase-Change Random Access Memory Applications
N-doped Sb2Te phase change materials for higher data retention
Study on the crystallization behaviors of Si2Sb2Tex materials
Study on TiO2-doped Ge2Te3 films for phase-change memory application
Study on the impact of the initialization process on the phase change memory
Investigation of Al doping on Ge55Te45 for phase change memory application
Advantages of GeTeN material for phase change memory applications
Scaling properties of phase-change line memory
Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
Al1.3Sb3Te material for phase change memory application
Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power
Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si-Sb-Te films for phase-c
Phase transition characteristics of Al-Sb phase change materials for phase change memory application
Ga-Sb-Se material for low-power phase change memory
Superlattice-like electrode for low-power phase-change random access memory
Study on Interface Adhesion between Phase Change Material Film and SiO2 Layer by Nanoscratch Test
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
一种具有掉电数据保持功能的触发器设计
基于相变存储器器件单元的电流脉冲测试系统
Ge_2Sb_2Te_5的化学机械抛光研究进展
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
基于PCRAM数据页聚簇的缓冲算法
基于二极管单元的高密度掩模ROM设计
Direct observation of metastable face-centered cubic Sb2Te3 crystal
一种滞环恒流LED驱动电路的电流采样电路
Thermal effect of Ge2Sb2Te5 in phase change memory device
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
大电流负载的片上LDO系统设计
Stress reduction and performance improvement of phase change memory cell by using Ge2Sb2Te5-TaOx com
High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material
Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memo
Instability of nitrogen doped Sb2Te3 for phase change memory application
Advantages of SixSb2Te phase-change material and its applications in phase-change random access memo
Sb2Te3-HfO2 composite films for low-power phase change memory application
Phase Change Memory Based on (Sb2Te3)(0.85)-(HfO2)(0.15) Composite Film
Sb2Te3-Ta2O5 nano-composite films for low-power phase-change memory application
Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films
Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memory
Ga14Sb86 film for ultralong data retention phase-change memory
Crystallization Process of Amorphous GaSb5Te4 Film for High-Speed Phase Change Memory
Investigation of HfO2 doping on GeTe for phase change memory
Design and Fabrication of Dual-Trench Epitaxial Diode Array for High-Density Phase-Change Memory
Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the cr
Si-Sb-Te materials for phase change memory applications
Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2T
SixSb2Te materials with stable phase for phase change random access memory applications
Scaling properties of phase-change line memory
Sb Rich Ge2Sb5Te5 Alloy for High-Speed Phase Change Random Access Memory Applications
Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications
An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell
Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
一种具有掉电数据保持功能的触发器设计
基于相变存储器器件单元的电流脉冲测试系统
Ge_2Sb_2Te_5的化学机械抛光研究进展
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
基于PCRAM数据页聚簇的缓冲算法
一种滞环恒流LED驱动电路的电流采样电路
Thermal effect of Ge2Sb2Te5 in phase change memory device
大电流负载的片上LDO系统设计
Optimization of 40-nm Node Epitaxial Diode Array for Phase-Change Memory Application
Mechanism of Oxidation on Si2Sb2Te5 Phase Change Material and Its Application
Scaling properties of phase-change line memory
An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector
Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam
Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
Germanium Nitride as a Buffer Layer for Phase Change Memory
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
一种具有掉电数据保持功能的触发器设计
基于相变存储器器件单元的电流脉冲测试系统
Ge_2Sb_2Te_5的化学机械抛光研究进展
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
基于PCRAM数据页聚簇的缓冲算法
三维相变存储阵列驱动二极管的制备研究
一种滞环恒流LED驱动电路的电流采样电路
Thermal effect of Ge2Sb2Te5 in phase change memory device
大电流负载的片上LDO系统设计
Scaling properties of phase-change line memory
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
一种具有掉电数据保持功能的触发器设计
循环肿瘤细胞富集和检测的纳米技术
基于PCRAM数据页聚簇的缓冲算法
一种滞环恒流LED驱动电路的电流采样电路
乙肝疫苗接种中的一些认识误区
南瓜花叶病毒胶体金免疫层析试纸条的研制
半巢式RT—RealtimePCR检测番茄丛矮病毒
半巢式RT—RealtimePCR检测南芥菜花叶病毒
Nanoscale structural and electronic evolution for increased efficiency in polymer solar cells monitored by electric scanning probe microscopy
磁性纳米粒子在检测中的应用
鲤春病毒核酸检测方法研究进展
大电流负载的片上LDO系统设计
Scaling properties of phase-change line memory
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
一种具有掉电数据保持功能的触发器设计
基于相变存储器器件单元的电流脉冲测试系统
基于相变存储器的SD卡系统设计
Ge_2Sb_2Te_5的化学机械抛光研究进展
Endurance characteristics of phase change memory cells
DOIND： a technique for leakage reduction in nanoscale domino logic circuits
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
操作电流对相变存储器单元疲劳特性的影响
带轻载变频模式的升压式DC-DC转换器设计
基于PCRAM数据页聚簇的缓冲算法
基于二极管单元的高密度掩模ROM设计
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology
Thermal effect of Ge2Sb2Te5 in phase change memory device
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
大电流负载的片上LDO系统设计
Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid
相变存储器失效时间分析
Ni纳米晶制备及其在MOS电容中存储特性研究
带隙可调的CdS纳米晶薄膜的化学浴制备和光学性质
室温下Ⅱ-Ⅵ族纳米晶粒在Si衬底上的化学自组装
铜纳米颗粒吸收光谱特性研究
An SPICE model for phase-change memory simulations
纳米球刻蚀法制备的二维有序的CdS纳米阵列及其光学性质的研究
Si2Sb2Te5 phase change material studied by an atomic force microscope nano-tip
Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals
相变随机存储器材料与结构设计最新进展
一种滞环恒流LED驱动电路的电流采样电路
大电流负载的片上LDO系统设计
Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid
相变存储器驱动电路的设计与实现
压印技术制备超高密度Si2Sb2Te5基相变存储阵列
利用压印技术制备大面积相变材料阵列
期刊信息
  • 《固体电子学研究与进展》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:南京电子器件研究所
  • 主编：杨乃彬
  • 地址：南京中山东路524号(南京160信箱43分箱)
  • 邮编：210016
  • 邮箱：gtdz@chinajournal.net.cn
  • 电话：025-86858161
  • 国际标准刊号：ISSN：1000-3819
  • 国内统一刊号：ISSN：32-1110/TN
  • 邮发代号:
  • 获奖情况:
  • 中国期刊方阵双效期刊,江苏省第六届优秀期刊,工信部09-10年期刊编辑质量优秀奖
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,中国中国科技核心期刊,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:2461