为了研究在稀释磁性半导体CoTiO2薄膜中不同退火温度对薄膜结构和磁性的影响,通过磁控溅射方法和原位退火工艺制备了CoTiO2薄膜样品。然后利用扫描探针显微镜以及振动样品磁强计对所制得的薄膜样品磁性和微结构的变化进行了研究。研究发现,热处理温度对薄膜的微结构和磁性能有很大的影响。扫描探针显微镜对样品的微结构分析结果表明,在400℃时磁性相的分布比较均匀,Co掺杂到TiO2结构当中且没有Co颗粒或团簇;振动样品磁强计测量样品的磁性能结果显示该样品具有明显的室温铁磁性。
In order to study the influence of annealing temperature on CoTiO2 magnetic properties and microstructure, CoTiO2 thin films have been fabricated on glass substrates by DC facing-target magnetron sputtering and subsequently annealed in situ vacuum. The morphologies and domain structures were observed by scanning probe microscope magnetic properties were measured by vibrating sample magnetometer. Studies show that the microstructure and magnetic properties of the films are greatly affected by annealing temperature. Annealed at 400 ℃, the sample showed smooth surface and apparent domain.There is no evidence for either elemental Co or the cluster of metal Co in the films. The hysteresis loop has been obtained from VSM, and it shows that there is well magnetic property at room temperature.