中文摘要：

采用离子束溅射技术,通过改变诱导量子点形成的C层生长温度,在n型Si（100）衬底上自组装生长了一系列Ge量子点。利用 AFM和 Raman光谱对样品的表面形貌和结构进行了表征。实验结果表明,当C层的温度从600℃升高到700℃时,Ge 量子点的密度逐渐降低,且结晶性变差；此时,量子点中的 Si 组分升高。当C层的生长温度从700℃升高到800℃过程中,Ge量子点的密度逐渐增大,结晶性也有所改善；此时,量子点中的Si含量降低。

英文摘要：

A series of Ge quantum dot samples at different C-induced layer temperature were grown on n-Si（100） substrates by ion beam sputtering.Their morphology and structure were characterizated by AFM and Raman spectra.Results showed that when the growth temperature of C layer increased from 600 to 700 ℃,the density of the quantum dots decreased to a minimum and the crystalline became worse;the Si composition increased in quantum dots at the same time.When the growth temperature of C layer increased from 700 to 800 ℃,the den-sity of the quantum dots increases to a maximum and the crystalline turned better;while the composition of Si in Ge quantum dots reduced.