位置：成果数据库 > 期刊 > 期刊详情页
Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO2 substrate
  • ISSN号：1674-4926
  • 期刊名称：《半导体学报：英文版》
  • 时间：0
  • 分类：O343.8[理学—固体力学;理学—力学] TQ174.6[化学工程—陶瓷工业;化学工程—硅酸盐工业]
  • 作者机构：[1]Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
  • 相关基金：Project supported by State Key Development Program for Basic Research of China （No. 2006CB6049）, the National Hi-Tech Research and Development Program of China （No. 2006AA03A142）, and the National Natural Science Foundation of China （Nos. 60721063, 60731160628, 60820106003）.
作者： 田密, 修向前, 张荣, 华雪梅, 刘战辉, 韩平, 谢自力, 郑有炓
关键词： LiAlO2, GaN薄膜, 各向异性, HVPE, 飞机, 氢化物气相外延, M型, 底片, γ-LiAlO2, GaN, HVPE, anisotropy, PL spectra
中文摘要：

Corresponding author. Email： real.cloud@126.com, xqxiu@mail.niu.edu.cn

同期刊论文项目
新型低维量子结构与器件
期刊论文 196 会议论文 66 获奖 2 专利 22 著作 2
室温铁磁半导体的制备与铁磁性研究
期刊论文 22
室温稀释磁性半导体材料和性质研究
期刊论文 18 专利 1
　推广型III族氮化物HVPE材料生长系统
期刊论文 28
同项目期刊论文
Si(111)衬底上HVPE GaN厚膜生长
红橙光InGaN/GaN量子阱的结构与光学性质研究
Fe/GaN、Fe_3N/GaN的生长及其性能研究
利用X射线衍射研究Mg掺杂的InN的快速退火特性
GaN薄膜中的马赛克结构随厚度发生的变化
InN的光致发光特性研究
生长温度对AlGaInN四元合金薄膜性质的影响
利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究
氢化物气相外延生长的GaN厚膜中位错密度计算
PECVD法氮化硅薄膜生长工艺的研究
阳极多孔氧化铝的斜孔形成过程及机理
Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD
利用Ni纳米岛模板制备半极性晶面GaN纳米柱
宽带隙半导体材料光电性能的测试
深能级对白光LED的电致发光和I-V特性的影响
Effects of V/III ratio on the growth of a-plane GaN films
Si(111)衬底上HVPE GaN厚膜生长
高温高压合成Co掺杂ZnO基DMS及其磁性特征
MOCVD外延生长a面GaN薄膜及其面内各向异性研究
a面GaN阴极荧光激发强度特性的研究
利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究
m面GaN平面内结构和光学各向异性研究
Mn掺杂GaN基稀磁半导体材料制备和特性研究
采用高分辨XRD对m面GaN位错特性的研究
氢化物气相外延生长的GaN厚膜中位错密度计算
PECVD法氮化硅薄膜生长工艺的研究
薄膜材料研究中的XRD技术
阳极多孔氧化铝的斜孔形成过程及机理
利用Ni纳米岛模板制备半极性晶面GaN纳米柱
宽带隙半导体材料光电性能的测试
深能级对白光LED的电致发光和I-V特性的影响
厚度对MOCVD生长InN薄膜位错特性与光电性质的影响
MOCVD生长Mn掺杂GaN薄膜的结构与磁学性能研究
Effects of V/III ratio on the growth of a-plane GaN films
Si(111)衬底上HVPE GaN厚膜生长
InGaN/GaN薄膜的阴极荧光研究
Surface morphology and composition studies in InGaN/GaN film grown by MOCVD
Multi-Gb/s LDPC Code Design and Implementation
Porous silicon based beta-FeSi2 and photoluminescence
AlN/Si(111)复合衬底上4H-SiC 薄膜的阴极荧光特性
The contributions of the acoustic modes and optical modes to the primary pyroelectric coefficient of
Observation of hole accumulation at the interface of an undoped InGaN/GaN heterostructure
Tunable violet–blue emission from 3C-SiC nanowires
Extraordinary transmission of sub-wavelength apertures in terahertz region
High-quality Schottky contacts to n -InGaN alloys prepared for photovoltaic devices
Si1-xGex:C 缓冲层的生长温度对Ge 薄膜外延生长的影响
Efficient Shuffle Network Architecture and Application for WiMAX LDPC Decoders
LDPC Decoder Design for High Rate Wireless Personal Area Networks
Induced changes on visible emission and conductive type in N-doped ZnO film by rapid thermal process
Low loss and magnetic field-tunable superconducting terahertz metamaterial
Tunable quantum beam splitters for coherent manipulation of a solid-state tripartite qubit system
Improved emission efficiency of electroluminescent device containing nc-Si/SiO2 multilayers by using
Indium tin oxide thin films for silicon-based elecro-luminescence devices prepared by electron-beam
Size-dependent optical properties of SnO2 nanoparticles prepared by soft chemical technique
Braodband anti-reflection and enhanced field emission from catalyst-free grown small-sized ITO nanow
Conducting Polymer Nanostructures: Template Synthesis and Applications in Energy Storage
Low Noise Receivers based on Superconducting Niobium Nitride Hot Electron Bolometer Mixers from 0.65
Study of the defects in GaN epitaxial films grown on Sapphire by HVPE
6H-SiC 同质外延层上Si1-yCy 合金的生长
6H—SiC 同质外延层上Si1—yCy 合金的生长
Separation of the Schottky barrier and polarization effects on the photocurrent of Pt sandwiched Pb(
Efficiency droop behavior of direct current aged GaN-based blue light-emitting diodes
Strain-modulated valence band engineering for enhancement of surface emission in AlN
Surface-polarization-induced formation of amorphous foliaceous SiO2 helical nanobelts
A novel hydrothermal route to synthesize solid SnO2 nanospheres and their photoluminescence property
InGaN/GaN multi-quantum-well-based light-emitting and photodetective dual-functional devices
Area-Efficient Reed–Solomon Decoder Design for Optical Communications
Stress influence on band-edge luminescence properties of 4H-AlN
Identification of surface structures on 3C-SiC nanocrystals with hydrogen and hydroxyl bonding by ho
Field dependent electroluminescence from amorphous Si/SiNx multilayer structure Dong
Layer by layer growth of CdTe nanocrystal thin films and its photoluminescence
Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs
Strain- and Compositional Modulation of the Near-Band-Edge Band Structures of AlN and Its Ternary Al
Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition
Non-contact evaluation of non-doped InP wafers by THz time-domain spectroscopy
Syntheses and Characteristics of Cubic Silicon Carbide Nanospheres with Smooth Surfaces
Morphology control and electron field emission properties of high-ordered Si nanoarrays fabricated b
A thermodynamic model and estimation of the experimental value of spontaneous polarization in a wurt
Observation of the surface circular photogalvanic effect in InN films
厚度对 MOCVD 生长 InN 薄膜位错特性与光电性质的影响
Influence of GeSi interfacial layer on Ge-Ge optical phonon mode in SiO2 films embedded with Ge nano
Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS S
Co doped ZnO(0001)-Zn by diffusion method and its magnetic properties
生长温度对 AlGaInN 四元合金薄膜性质的影响
MOCVD 生长的全组分 InGaN 材料
Influence of Si crystallization evolution on 1.54 mu m luminescence in Er-doped Si/Al2O3 multilayer
Single photon detectors based on superconducting nanowires over large active areas
Nanoelectromechanical spin injector with large current signal at room temperature
Au/Pt/InGaN/GaN Heterostructure Schottky Prototype Solar Cell
Raman investigation of oxidation mechanism of silicon nanowires
Synthesis, structures and luminescence properties of SnO2 nanoparticles
Electrically driven luminescence of nanocrystalline Si/SiO2 multilayers on various substrates
Charge storage and light emission properties of three dimension controllable Si nanostructures
Electroluminescence from Si-rich SiNx/N-rich SiNy multilayer light-emitting devices
不同退火温度下晶化硅薄膜的电学输运性质
High-resistivity GaN homoepitaxial layer studied by Schottky diode structure
AlN/Si(111)复合衬底上4H-SiC 薄膜的异质外延研究
Modification of the valence band structures of polar and nonpolar plane wurtzite-GaN by anisotropic
采用高分辨 XRD 确定 AlxGa1-xN/GaN 异质结的应变状态
An Improved Scaled DCT Architecture
Structural Characterization of Mesoporous Silica Nanofibers Synthesized Within Porous Alumina Membra
Fabrication of nanowire-like cuprous oxide in aqueous solutions of a triblock copolymer
A high isolation series-shunt RF MEMS switch
Optical and vibrational properties of 2H-, 4H, and 6H-AlN: First principle calculations
GeSi/Si hetero-nanocrystals and the applications in MOSFET memories
Electroluminescent devices based on amorphous SiN/Si quantum dots/amorphous SiN sandwiched structure
C2H4/GeH4 分压比对Si1-xGex:C 合金薄膜性质的影响
Electroluminescence from Si quantum dots/SiO2 multilayers with ultrathin oxide layers due to bipolar
Damping of surface acoustic vibration induced by electrons trapped on SnO2 nanocrystal surface
Polarization and temperature dependence of photoluminescence of m-plane GaN grown on gamma-LiAlO2 (1
The effect of long-duration high-temperature annealing in an air ambient on the properties of AlGaN/
阴极荧光联合分析系统在III族氮化物研究中的应用
CVD growth of Ge Films on Graded Si1—xGex:C Buffers
Si1—xGex:C 缓冲层的生长温度对薄膜外延生长的影响
Effects of an AlN passivation layer on the microstructure and electronic properties of AlGaN/GaN het
High temperature dehydrogenation for realization of nitrogen doped p-type ZnO
Silver fractal networks for surface enhanced Raman scattering substrates
Ab initio determination of lattice dynamics of β-BC2N
Formation mechanism and photoluminescence of AlN nanowhisker
Broad excitation of Er luminescence in Er-doped HfO2 films,
AlN/Si（1111）复合衬底上4H—SiC 薄膜的异质外延研究
4H-Si1-yCy 合金的生长和特性
AlN/Si(111)衬底上4H-SiC 的CVD 外延生长研究
Catalysis of dispersed silver particles on directional etching of silicon
Charge storage characteristics in metal-oxide-semiconductor memory structure based on gradual Ge1-xS
Signals for Specular Andreev Reflection
Room-Temperature Ferromagnetism in Mn-N Co-doped p-ZnO Epilayers by MOCVD
Pr3+ photoluminescence in ferroelectric (Ba0.77Ca0.23)TiO3 ceramics: sensitive to polarization and p
生长温度对Si1-xGex:C 薄膜外延生长的影响
Self-organized formation of silver nanowires, nanocubes, and bipyramids via a solvothermal method
Mg掺杂AlGaN的特性研究
Double-side fabrication process and millimeter wave response of intrinsic Josephson junctions
MOCVD外延生长a面GaN薄膜及其面内各向异性研究
a面GaN阴极荧光激发强度特性的研究
生长温度对AlGaInN四元合金薄膜性质的影响
利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究
m面GaN平面内结构和光学各向异性研究
Chemical mechanical polishing of freestanding GaN substrates
Mn掺杂GaN基稀磁半导体材料制备和特性研究
采用高分辨XRD对m面GaN位错特性的研究
氢化物气相外延生长的GaN厚膜中位错密度计算
PECVD法氮化硅薄膜生长工艺的研究
薄膜材料研究中的XRD技术
阳极多孔氧化铝的斜孔形成过程及机理
阳极氧化法制备氧化铝纳米线
LPCVD法在GaN上生长Ge薄膜及其特性
AlGaN/GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究
利用Ni纳米岛模板制备半极性晶面GaN纳米柱
宽带隙半导体材料光电性能的测试
深能级对白光LED的电致发光和I-V特性的影响
亚波长孔阵列的太赫兹波异常透射研究
Nb5N6 thin film on silicon and silicon oxide： A good material for terahertz detection
基于铌超导隧道结的亚毫米波直接检测器
磷化铟（InP）在太赫兹波段的特性研究
双栅调控的硅量子线中的库仑振荡效应
厚度对MOCVD生长InN薄膜位错特性与光电性质的影响
MOCVD生长Mn掺杂GaN薄膜的结构与磁学性能研究
Effects of V/III ratio on the growth of a-plane GaN films
GaN转移电子器件的性能与基本设计
AlN/Si(111)衬底上4H-SiC的CVD外延生长研究
Detection of infrared photons with a superconductor
阴极荧光联合分析系统在III族氮化物研究中的应用
高温高压合成Co掺杂ZnO基DMS及其磁性特征
Mg掺杂的AlGaN的MOCVD生长
GaN/Al_2O_3(0001)上Ge薄膜的CVD外延生长
生长参数对Si_(1-x)Ge_x∶C合金薄膜中元素分布的影响
Si上Si1-xGex:C 缓冲层的载流子分布
应变硅薄膜的厚度对材料迁移率的影响
高分辨率X射线衍射研究InGaN/GaN多量子阱结构In组分及厚度
GaN MOCVD生长机制的量子化学计算
MOCVD生长不同Al组分AlGaN薄膜
生长温度对AlGaInN四元合金薄膜性质的影响
利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究
m面GaN平面内结构和光学各向异性研究
4H-SiC外延中的缺陷及其对肖特基二极管的影响
4H-SiC欧姆接触与测试方法研究
薄膜材料研究中的XRD技术
一维AIN纳米结构制备进展
阳极多孔氧化铝的斜孔形成过程及机理
AlxGa1-xN／AlN超晶格材料特性研究
推广型Ⅲ族氮化物HVPE材料生长系统
期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,英国英国皇家化学学会文摘,中国北大核心期刊（2000版）
  • 被引量:7754