中文摘要：

在InP基异质结InGaAsP多量子阱（MQW）结构上溅射Cu/SiO2复合层,开展了量子阱混杂（QWI）材料的实验研究。经快速退火（RTA）,实现了比常规无杂质空位扩散（IFVD）方法更大的带隙波长蓝移量。在750℃、200s的退火条件下,获得最大172nm的波长蓝移；通过改变退火条件,可实现不同程度的蓝移,满足光子集成技术中不同器件对带隙波长的需求。为了验证其用于光子集成领域的可行性,利用混杂技术分别制备了宽条激光器和单片集成电吸收调制激光器（EML）。在675℃退火温度,80s、120s的退火时间下分别实现了61、81nm的波长蓝移；并且,相应的宽条激光器的电激射光（EL）谱偏调量与其材料的光致荧光（PL）谱偏调量基本一致。在675s退火条件下,制备的EML集成器件中,电吸收调制器（EAM）和分布反馈（DFB）激光器区的蓝移量分别83nm和23.7nm,相对带隙差为59.3nm。EML集成器件在激光器注入电流为100mA、调制器零偏压时出光功率达到9.6mW；EAM施加－5V反向偏压时静态消光比达16.4dB。

英文摘要：

Quantum well intermixing （QWI） using sputtered Cu/SiO2layers is demo nstrated in InP-based heterostructure of InGaAsP multiple quantum wells.The bandgap energy could be m odulated by adjusting the annealing conditions to satisfy the need of bandgaps in different devices.A max imum wavelength shift of 172nm could be realized with an annealing condition of 750℃ and 200s,which is muc h larger than the common impurity free vacancy disordering.In this paper,the QWI technology is used to fabricate the broad area lasers and electro-absorption modulated laser （EML） to explore its feasibility in phot onics integrated circuits.The bandgap blue-shifts of 61nm,81nm and 98nm are realized with the annealing t ime of 80s,120s and 200s at an annealing temperature of 675℃ for the preparation of broad area lasers.The EL wavelength blue shift of the corresponding MQW material after QWI is almost in accordance with that of the P L wavelength.The wavelength bule shifts are 83nm and 23.7nm for EA and DFB regions,respectivel y with annealing time of 120s at 675℃,which induces a relative bandgap detuning of 59.3nm.The outpu t power of the fabricated EML could reach 9.6mW with 100mA injection current of laser at 0V reverse volta ge of EAM.The extinction ration is about 16.4dB with a reverse voltage of -5V for EAM.