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High-PSRR High-Order Curvature-Compensated CMOS Bandgap Voltage Reference
  • ISSN号:1673-1905
  • 期刊名称:《光电子快报:英文版》
  • 时间:0
  • 分类:TN432[电子电信—微电子学与固体电子学]
  • 作者机构:[1]Chongqing Key Laboratory of Photoelectronic Information Sensing and Transmitting Technology, ChongqingUniversity of Posts and Telecommunications, Chongqing 400065, China, [2]College of Computer Science and Technology, Chongqing University of Posts and Telecommunications, Chongqing 400065, China, [3]School of Electronic Information and Automation, Sichnan University of Science and Engineering, Zigong Sichnan 643000, China
  • 相关基金:Sponsored by the National Natural Science Foundation of China(Grant No.61471075); the 2013 Program for Innovation Team Building at Institutions of Higher Education in Chongqing(The Innovation Team of Smart Medical System and Key Technology)
中文摘要:

A high-PSRR high-order curvature-compensated CMOS bandgap voltage reference( BGR),which has the performances of high power supply rejection ratio( PSRR) and low temperature coefficient,is designed in SMIC 0. 18 μm CMOS process. Compared to the conventional curvature-compensated BGR which adopted a piecewise-linear current,the temperature characterize of the proposed BGR is effectively improved by adopting two kinds of current including a piecewise-linear current and a current proportional 1. 5 party to the absolute temperature T. By adopting a low dropout( LDO) regulator whose output voltage is the operating supply voltage of the proposed BGR core circuit instead of power supply voltage VDD,the proposed BGR with LDO regulator achieves a well PSRR performance than the BGR without LDO regulator. Simulation results show that the proposed BGR with LDO regulator achieves a temperature coefficient of 2. 1 × 10-6/ ℃ with a 1. 8 V power supply voltage and a line regulation of 4. 9 μV / V at 27 ℃. The proposed BGR with LDO regulator at 10 Hz,100 Hz,1 k Hz,10 k Hz and 100 k Hz have the PSRR of- 106. 388,- 106. 388,- 106. 38,- 105. 93 and-88. 67 d B respectively.更多还原

英文摘要:

A high-PSRR high-order curvature-compensated CMOS bandgap voltage reference( BGR),which has the performances of high power supply rejection ratio( PSRR) and low temperature coefficient,is designed in SMIC 0. 18 μm CMOS process. Compared to the conventional curvature-compensated BGR which adopted a piecewise-linear current,the temperature characterize of the proposed BGR is effectively improved by adopting two kinds of current including a piecewise-linear current and a current proportional 1. 5 party to the absolute temperature T. By adopting a low dropout( LDO) regulator whose output voltage is the operating supply voltage of the proposed BGR core circuit instead of power supply voltage VDD,the proposed BGR with LDO regulator achieves a well PSRR performance than the BGR without LDO regulator. Simulation results show that the proposed BGR with LDO regulator achieves a temperature coefficient of 2. 1 × 10-6/ ℃ with a 1. 8 V power supply voltage and a line regulation of 4. 9 μV / V at 27 ℃. The proposed BGR with LDO regulator at 10 Hz,100 Hz,1 k Hz,10 k Hz and 100 k Hz have the PSRR of- 106. 388,- 106. 388,- 106. 38,- 105. 93 and-88. 67 d B respectively.

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期刊信息
  • 《光电子快报:英文版》
  • 主管单位:
  • 主办单位:天津理工大学
  • 主编:巴恩旭
  • 地址:天津市西青区宾水西道391号
  • 邮编:300384
  • 邮箱:Oelett@yahoo.com.cn
  • 电话:022-23679707 23657134
  • 国际标准刊号:ISSN:1673-1905
  • 国内统一刊号:ISSN:12-1370/TN
  • 邮发代号:6-198
  • 获奖情况:
  • 中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 荷兰文摘与引文数据库,美国工程索引,英国科学文摘数据库
  • 被引量:147