中文摘要：

氮化铝（AlN）是一种重要的宽带隙（6．2eV）半导体材料，在高温、高频、大功率电子器件、光电子器件、激光器件等半导体器件中有着良好的应用前景。物理气相传输法（PVT）是制备AlN体单晶最有效的途径之一，目前，美国CrystalIS公司、俄罗斯N-Crystals公司在该领域处于领先地位，可以制备出直径为2inch（5．08cm）的体单晶。为了获得大尺寸、高质量的AlN晶体，需要不断寻找合适的籽晶材料。从最早的SiC籽晶，发展到近年来的AlN籽晶、SiC／AlN复合籽晶，加上不断改进的PVT工艺条件，少数研究机构已经可以获得直径跨度大、缺陷密度低的AlN晶体。近两年，高品质的A1N晶体也已成功应用于紫外LED的研制。

英文摘要：

Aluminum nitride（AlN） is a significant wide band-gap semiconductor material, which is propective in many semiconductor devices such as high-temperature, high-frequency, large-power electronic devices, optoeleetronic devices, laser devices and so on. Physical vapor transport method （PVT） is one of the most effective method for the growth of AlN bulk crystal. Currently, Crystal IS Ltd, U. S. , N-Crystals Ltd, Russia, are capable to prepare AlN bulk crystal 2inch in diameter, which are in the leading position in this field. In order to obtain AlN crystal with large area and high quality, consistent search for compatible seed material is needed. From the earlier SiC seed , to the recent developed AIN seed and SiC/AlN seed, along with improved process conditions, a few research institutions have access to AlN crystal with large size in diameter and low defect density. During the past two years, high-quality AlN crystals have been successfully applied to the development of UV-LED.