通过对不同晶系线性电光系数矩阵的分析计算,研究了利用晶体电光系数γ51实现电光调制的可能性.结果分析表明,在电场中的γ51引起折射率的变化与x方向电场强度E12成正比;利用KTa0.35Nb0.65O3晶体的巨大γ51参数引起的二次电光效应,可以获得较低的半波电压;在立方-四方相变点附近的KTa1-xNbxO3晶体有极大克尔系数的现象,同时γ51参数电光效应也得到了解释.
The feasibility of electro-optic modulation based on electro-optical coefficient γ51 was investigated,by calculating linear electro-optical coefficient matrix consisting of γ51.The variety of the relative index induced by the field was proportional to E21.It could give an explanation of giant Kerr coefficient around the cubic-tetragonal phase transition of KTa1-xNbxO3.And a design proposal of electro-optic modulation utilizing γ51 of KTa0.35Nb0.65O3 was introduced.